Thank you for taking interest in Semiconductor Components Industries part number BAT54ALT1G, which is listed with the NSN 5961-01-622-7020 and a product description of “Semiconductor Devices Unitized.” In order to receive procurement options on this particular listing, we ask that you fill out and submit the form provided below with as much information as you can concerning your needs. By supplying our staff with key details on your desired quantity, pricing target, and expedited fulfillment timeframe, we can respond with a quote that has been specifically tailored to your unique specifications. We also ask that you make us aware of any restrictions that you may have as soon as possible, such as if you have a time constraint or are seeking unlisted items.
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NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
---|---|---|---|---|---|---|
5961-01-622-7020 Item PartTypeName: SEMICONDUCTOR DEVICES,UNITIZED | 5961 | 016227020 | 0 | N | B | |
CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
U | B | A | 0 | |||
Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
BAT54AL-G | 5 | 2 | 3 |
MRC | Criteria | Characteristic |
---|---|---|
CTQN | Voltage Rating In Volts Per Characteristic | 30.0 MINIMUM BREAKDOWN VOLTAGE, DC 2ND SEMICONDUCTOR DEVICE DIODE |
ASKA | Component Name And Quantity | 2 SEMICONDUCTOR DEVICE DIODE |
CTQX | Current Rating Per Characteristic | 200.0 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC 1ST SEMICONDUCTOR DEVICE DIODE |
CTRD | Power Rating Per Characteristic | 225.0 MILLIWATTS NOMINAL FORWARD POWER DISSIPATION, DC 1ST SEMICONDUCTOR DEVICE DIODE |
AKPV | Mounting Facility Quantity | 3 |
AXGY | Mounting Method | TERMINAL |
CTRD | Power Rating Per Characteristic | 225.0 MILLIWATTS NOMINAL FORWARD POWER DISSIPATION, DC 2ND SEMICONDUCTOR DEVICE DIODE |
CTRG | Capacitance Rating In Picofarads | 7.6 NOMINAL AND 10.0 MAXIMUM 1ST SEMICONDUCTOR DEVICE DIODE |
ABKW | Overall Height | 0.040 INCHES NOMINAL |
CTSG | Maximum Operating Temp Per Measurement Point | 150.0 DEG CELSIUS JUNCTION |
CTQX | Current Rating Per Characteristic | 200.0 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC 2ND SEMICONDUCTOR DEVICE DIODE |
CTRG | Capacitance Rating In Picofarads | 7.6 NOMINAL AND 10.0 MAXIMUM 2ND SEMICONDUCTOR DEVICE DIODE |
CBBL | Features Provided | VERY HIGH SPEED |
AFZC | Function For Which Designed | DETECTOR AND SWITCHING |
ALAZ | Joint Electronic Device Engineering Council/Jedec/Case Outline Designation | 318 |
ABHP | Overall Length | 0.114 INCHES NOMINAL |
TTQY | Terminal Type And Quantity | 3 PRINTED CIRCUIT |
ABJT | Terminal Length | 0.021 INCHES NOMINAL |
ABMK | Overall Width | 0.094 INCHES NOMINAL |
CXCY | Part Name Assigned By Controlling Agency | DIODE |
ABBH | Inclosure Material | PLASTIC |
MRC | Decoded Requirement | Clear Text Reply |
CTQN | Voltage Rating In Volts Per Characteristic | 30.0 MINIMUM BREAKDOWN VOLTAGE, DC 1ST SEMICONDUCTOR DEVICE DIODE |
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